Temperature resolved 1.3 /spl mu/m AlGaInAs MQW laser measurements: transparency current density, gain and carrier lifetime

Author

Yong, J.C.L. ; Houle, T.J. ; Marinelli, C.M. ; Rorison, J.M. ; Yu, S. ; White, J.K. ; SpringThorpe, A.J. ; Garrett, B.

Author_Institution

Dept. of Electr. & Electron. Eng., Bristol Univ., UK

fYear

2002

fDate

24-24 May 2002

Firstpage

267

Abstract

Summary form only given. To study the potential of this material system, results of threshold current variation, transparency current density and optical gain over temperature as well as the effective carrier lifetime of a 1.3 /spl mu/m ridge waveguide grating (RWG) AlGaInAs MQW laser are presented.

Keywords

III-V semiconductors; aluminium compounds; carrier lifetime; current density; gallium arsenide; indium compounds; infrared sources; laser transitions; quantum well lasers; ridge waveguides; waveguide lasers; 1.3 /spl mu/m AlGaInAs MQW laser measurements; 1.3 micron; AlGaInAs; carrier lifetime; effective carrier lifetime; laser gain measurement; optical gain; ridge waveguide grating AlGaInAs MQW laser; temperature resolved; transparency current density; Charge carrier lifetime; Current density; Current measurement; Density measurement; Gain measurement; Optical materials; Optical waveguides; Quantum well devices; Temperature; Waveguide lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2002. CLEO '02. Technical Digest. Summaries of Papers Presented at the

Conference_Location

Long Beach, CA, USA

Print_ISBN

1-55752-706-7

Type

conf

DOI

10.1109/CLEO.2002.1033931

Filename

1033931