Temperature sensitivity analysis of high-performance InGaAs(N) (/spl lambda/ = 1.185 - 1.3 /spl mu/m) quantum well lasers

Author

Tansu, N. ; Mawst, L.J.

Author_Institution

Dept. of Electr. & Comput. Eng., Wisconsin Univ., Madison, WI, USA

fYear

2002

fDate

24-24 May 2002

Abstract

Summary form only given. We find the use of a tensile-strained InGaP buffer layer to be crucial for the growth of the high-In-content InGaAsN QWs on a thick high-Al-content AlGaAs bottom-cladding layers, as evident from the significant improvement in the luminescence from incorporation of the buffer layer. The InGaAs QW laser, exhibits low threshold and transparency current densities.

Keywords

III-V semiconductors; current density; gallium arsenide; gallium compounds; indium compounds; laser transitions; photoluminescence; quantum well lasers; sensitivity; thermo-optical effects; transparency; InGaAs QW laser; InGaAsN; high-In-content InGaAsN QWs; low threshold; luminescence; quantum well lasers; temperature sensitivity analysis; tensile-strained InGaP buffer layer; thick high-Al-content AlGaAs bottom-cladding layers; transparency current densities; Buffer layers; Current density; Indium gallium arsenide; Loss measurement; Quantum computing; Quantum well lasers; Sensitivity analysis; Temperature dependence; Temperature measurement; Temperature sensors;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2002. CLEO '02. Technical Digest. Summaries of Papers Presented at the

Conference_Location

Long Beach, CA, USA

Print_ISBN

1-55752-706-7

Type

conf

DOI

10.1109/CLEO.2002.1033933

Filename

1033933