DocumentCode :
2267903
Title :
Experimental investigation of subcooled liquid nitrogen impingement cooling of a silicon chip
Author :
Vader, D.T. ; Chrysler, G.M. ; Chu, R.C. ; Simons, R.E.
Author_Institution :
Dept. of Eng., Messiah Coll., Grantham, PA, USA
fYear :
1995
fDate :
7-9 Feb 1995
Firstpage :
115
Lastpage :
121
Abstract :
A technique was developed to facilitate subcooled pool boiling and jet impingement boiling of liquid nitrogen at the surface of a silicon chip by varying the dewar pressure while maintaining the bath temperature constant at about 78 K. Subcooling levels of up to 10 K could be easily reached by pressurizing the liquid nitrogen bath with helium gas. Convective and boiling impingement cooling of up to 80 W/cm 2 from a silicon chip has been measured for a submerged subcooled liquid nitrogen jet
Keywords :
cryogenic electronics; elemental semiconductors; integrated circuit packaging; silicon; undercooling; 68 to 78 K; He; N; Si; bath temperature; dewar pressure; helium gas; silicon chip; subcooled liquid nitrogen impingement cooling; submerged subcooled liquid nitrogen jet; Diodes; Electronics cooling; Heat transfer; Heating; Helium; Immersion cooling; Nitrogen; Silicon; Temperature; Thermal conductivity;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Thermal Measurement and Management Symposium, 1995. SEMI-THERM XI., Eleventh Annual IEEE
Conference_Location :
San Jose, CA
ISSN :
1065-2221
Print_ISBN :
0-7803-2434-X
Type :
conf
DOI :
10.1109/STHERM.1995.512060
Filename :
512060
Link To Document :
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