• DocumentCode
    2267969
  • Title

    Status of plasma source developments for ion beam and PIII applications at INRS-Energie et Materiaux

  • Author

    Sarkissian, A.H. ; Stansfield, B.L. ; Boucher, Christina ; Gregory, B.C. ; Martin, F.

  • Author_Institution
    INRS-Energie et Mater., Quebec Univ., Varennes, Que., Canada
  • fYear
    1995
  • fDate
    5-8 June 1995
  • Firstpage
    120
  • Lastpage
    121
  • Abstract
    Summary form only given, as follows. The development of fast modulated plasma sources for use with energetic ion beam and plasma immersed ion implantation (PIII) systems is in progress at INRS-Energie et Materiaux. DuoPIGatron and compact ECR sources are both under development. Modulation of the duoPIGatron source has been realized using a fast switching circuit. The useful modulation frequency is limited by the source impedance. The ECR plasma sources are modulated via pulsing the 2.45 GHz, 1.5 kW microwave power. Two types of ECR plasma sources are under study. The first is a volume resonance source, which has been operational for several years. The other source is a new surface resonance source, where 28 columns of NdFeB permanent magnets arranged with alternating poles provide both the resonance surface and the confining field for the plasma electrons. Various diagnostics such as scanning Langmuir probes and diamagnetic loops are used for characterization of the source plasma. Laser fluorescence spectroscopy provides the main diagnostic tool for studying the ion energy distribution in the plasma sheath region. The optimization of plasma sources, the setup for PIII studies and the results will be presented and discussed.
  • Keywords
    Langmuir probes; duoplasmatrons; fluorescence spectroscopy; ion beam applications; ion implantation; plasma diagnostics; plasma production; plasma sheaths; 1.5 kW; 2.45 GHz; DuoPIGatron source modulation frequency; INRS-Energie et Materiaux; NdFeB; NdFeB permanent magnets; alternating poles; compact ECR sources; confining field; diamagnetic loops; energetic ion beam; fast modulated plasma sources; fast switching circuit; ion energy distribution; laser fluorescence; microwave power; plasma electrons; plasma immersed ion implantation; plasma sheath region; resonance surface; scanning Langmuir probes; source plasma; surface resonance source; volume resonance source; Ion beams; Ion implantation; Optical modulation; Plasma confinement; Plasma diagnostics; Plasma immersion ion implantation; Plasma sheaths; Plasma sources; Resonance; Switching circuits;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Plasma Science, 1995. IEEE Conference Record - Abstracts., 1995 IEEE International Conference on
  • Conference_Location
    Madison, WI, USA
  • ISSN
    0730-9244
  • Print_ISBN
    0-7803-2669-5
  • Type

    conf

  • DOI
    10.1109/PLASMA.1995.531486
  • Filename
    531486