Title :
A simple and effective ESD protection structure for high-voltage-tolerant I/O pad
Author :
Fan, Hang ; Jiang, Lingli ; Zhang, Bo
Author_Institution :
Univ. of Electron. Sci. & Technol. of China, Chengdu, China
Abstract :
A simple and effective ESD protection structure is proposed for the high-voltage-tolerant I/O pad. It can tolerate a voltage higher than the power supply voltage without the leakage current caused by PMOS in original GGNMOS/GDPMOS protection structure. And it can provide a direct current path under PD/ND mode ESD stress, which is missing in general ESD design for the high-voltage-tolerant I/O pad. It can sustain 2.7A TLP stress according to our simulation result. This protection structure can also be used for high voltage and high power open drain driver and the negative-voltage-tolerant I/O pad.
Keywords :
MOS integrated circuits; electrostatic discharge; high-voltage techniques; ESD protection structure; high power open drain driver; high-voltage-tolerant I/O pad; Driver circuits;
Conference_Titel :
Communications, Circuits and Systems (ICCCAS), 2010 International Conference on
Conference_Location :
Chengdu
Print_ISBN :
978-1-4244-8224-5
DOI :
10.1109/ICCCAS.2010.5581922
