Adaptive mesh generation in three dimensional device simulation

Author

Tanaka, K. ; Kato, H. ; Ciampolini, P. ; Pierantoni, A. ; Baccarani, G.

Author_Institution

Microelectron. Res. Labs., NEC Corp., Sagamihara, Japan

fYear

1994

fDate

5-6 Jun 1994

Firstpage

163

Lastpage

166

Abstract

An automatic mesh optimization technique based on an a posteriori error evaluation is incorporated into the 3D device simulator HFIELDS-3D. The discretization error in electric field and current density is used for error indication. Although the calculation method to estimate these errors is simplified and modified to suit prismatic mesh elements, simulation results shows that the mesh can be optimized appropriately for different bias conditions by using unique upper limit values for error indicators

Keywords

current density; digital simulation; electronic engineering computing; mesh generation; semiconductor device models; 3D device simulator; HFIELDS-3D; adaptive mesh generation; automatic mesh optimization technique; bias conditions; current density; discretization error; electric field; prismatic mesh elements; three dimensional device simulation; Automatic control; Current density; Degradation; Equations; Mesh generation; Microelectronics; National electric code; Optimization methods; Predictive models; Solid modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Numerical Modeling of Processes and Devices for Integrated Circuits, 1994. NUPAD V., International Workshop on

Conference_Location

Honolulu, HI

Print_ISBN

0-7803-1867-6

Type

conf

DOI

10.1109/NUPAD.1994.343466

Filename

343466