Title :
A new approach for 2-D mesh generation for complex device structures
Author :
Garreton, G. ; Villablanca, L. ; Strecker, N. ; Fichtner, W.
Author_Institution :
Integrated Syst. Lab., Swiss Federal Inst. of Technol., Zurich, Switzerland
Abstract :
Mesh generation has become one of the most important steps in technology CAD (TCAD). The ever increasing complexity of modern semiconductor devices together with certain restrictions on the grid parameters (non-obtuse angles, desirable aspect ratios, etc.) put stringent requirements on the performance of mesh generators. This paper formulates new aspects to consider in the mesh generation process
Keywords :
electronic engineering computing; mesh generation; semiconductor device models; simulation; 2D mesh generation; FEM; complex device structures; finite element method; grid parameters; semiconductor devices; Binary trees; Data structures; Geometry; Impurities; Laboratories; Mesh generation; Modeling; Numerical simulation; Refining; Semiconductor devices;
Conference_Titel :
Numerical Modeling of Processes and Devices for Integrated Circuits, 1994. NUPAD V., International Workshop on
Conference_Location :
Honolulu, HI
Print_ISBN :
0-7803-1867-6
DOI :
10.1109/NUPAD.1994.343467
