Title :
Mesh adaption and flux discretizations for dopant diffusion modeling
Author :
Lin, Chih-Chuan ; Law, Mark E.
Author_Institution :
Dept. of Electr. Eng., Florida Univ., Gainesville, FL, USA
Abstract :
Mesh generation for process simulation is a difficult task, complicated by both the moving boundaries and the time dependence of the solutions. For both computational and ease of use reasons, automatic mesh generation and discretization error control is desirable. This paper describes an approach based on local error estimates to refine the mesh. This paper extends our previous work to two-dimensional problems
Keywords :
diffusion; mesh generation; semiconductor doping; semiconductor process modelling; automatic mesh generation; discretization error control; dopant diffusion modeling; flux discretizations; local error estimates; mesh adaption; process simulation; two-dimensional problems; Computational modeling; Error correction; Finite wordlength effects; Mesh generation; Robustness; Semiconductor process modeling; Silicon; Tail;
Conference_Titel :
Numerical Modeling of Processes and Devices for Integrated Circuits, 1994. NUPAD V., International Workshop on
Conference_Location :
Honolulu, HI
Print_ISBN :
0-7803-1867-6
DOI :
10.1109/NUPAD.1994.343469
