DocumentCode
2268638
Title
Mesh adaption and flux discretizations for dopant diffusion modeling
Author
Lin, Chih-Chuan ; Law, Mark E.
Author_Institution
Dept. of Electr. Eng., Florida Univ., Gainesville, FL, USA
fYear
1994
fDate
5-6 Jun 1994
Firstpage
151
Lastpage
154
Abstract
Mesh generation for process simulation is a difficult task, complicated by both the moving boundaries and the time dependence of the solutions. For both computational and ease of use reasons, automatic mesh generation and discretization error control is desirable. This paper describes an approach based on local error estimates to refine the mesh. This paper extends our previous work to two-dimensional problems
Keywords
diffusion; mesh generation; semiconductor doping; semiconductor process modelling; automatic mesh generation; discretization error control; dopant diffusion modeling; flux discretizations; local error estimates; mesh adaption; process simulation; two-dimensional problems; Computational modeling; Error correction; Finite wordlength effects; Mesh generation; Robustness; Semiconductor process modeling; Silicon; Tail;
fLanguage
English
Publisher
ieee
Conference_Titel
Numerical Modeling of Processes and Devices for Integrated Circuits, 1994. NUPAD V., International Workshop on
Conference_Location
Honolulu, HI
Print_ISBN
0-7803-1867-6
Type
conf
DOI
10.1109/NUPAD.1994.343469
Filename
343469
Link To Document