Optimization of switching losses and EMI in a gate driver circuit for IGBT devices

IGBT devices are increasingly used in power electronic equipment due to their high power handling capability. The aim of this paper is to propose a circuit topology that allows an acceptable compromise between switching speed, power dissipation and electromagnetic radiation of an IGBT device, by suitably shaping the gate current during the switching transients. The paper begins with an analysis of the switching waveforms highlighting the parameters which affect the switching characteristics. Stimulation results are presented for an IGBT device in a hard switching application.