Title :
Further improvements in decoupled methods for semiconductor device modeling
Author :
Obrecht, M.S. ; Heasell, E.L. ; Elmasry, M.I. ; Wu, K.C. ; Dutton, R.W.
Author_Institution :
Dept. of Electr. & Comput. Eng., Waterloo Univ., Ont., Canada
Abstract :
Two complementary techniques for accelerating the Gummel iterations are successfully combined to yield an efficient and robust, decoupled nonlinear solution method for semiconductor device simulation. The reasons for this success are explored. The effectiveness of the new method under high level injection, and its robustness in the presence of large time or bias steps should pave the way to its widespread application in multidimensional semiconductor device simulation
Keywords :
convergence of numerical methods; digital simulation; iterative methods; semiconductor device models; Gummel iterations; bias steps; decoupled methods; device simulation; high level injection; multidimensional semiconductor device; nonlinear solution method; robustness; semiconductor device modeling; time steps; Acceleration; Convergence; Integrated circuit yield; Laboratories; MOSFET circuits; Poisson equations; Robustness; Semiconductor device modeling; Semiconductor devices; Steady-state;
Conference_Titel :
Numerical Modeling of Processes and Devices for Integrated Circuits, 1994. NUPAD V., International Workshop on
Conference_Location :
Honolulu, HI
Print_ISBN :
0-7803-1867-6
DOI :
10.1109/NUPAD.1994.343474
