Further improvements in decoupled methods for semiconductor device modeling

Author

Obrecht, M.S. ; Heasell, E.L. ; Elmasry, M.I. ; Wu, K.C. ; Dutton, R.W.

Author_Institution

Dept. of Electr. & Comput. Eng., Waterloo Univ., Ont., Canada

fYear

1994

fDate

5-6 Jun 1994

Firstpage

129

Lastpage

132

Abstract

Two complementary techniques for accelerating the Gummel iterations are successfully combined to yield an efficient and robust, decoupled nonlinear solution method for semiconductor device simulation. The reasons for this success are explored. The effectiveness of the new method under high level injection, and its robustness in the presence of large time or bias steps should pave the way to its widespread application in multidimensional semiconductor device simulation

Keywords

convergence of numerical methods; digital simulation; iterative methods; semiconductor device models; Gummel iterations; bias steps; decoupled methods; device simulation; high level injection; multidimensional semiconductor device; nonlinear solution method; robustness; semiconductor device modeling; time steps; Acceleration; Convergence; Integrated circuit yield; Laboratories; MOSFET circuits; Poisson equations; Robustness; Semiconductor device modeling; Semiconductor devices; Steady-state;

fLanguage

English

Publisher

ieee

Conference_Titel

Numerical Modeling of Processes and Devices for Integrated Circuits, 1994. NUPAD V., International Workshop on

Conference_Location

Honolulu, HI

Print_ISBN

0-7803-1867-6

Type

conf

DOI

10.1109/NUPAD.1994.343474

Filename

343474