Title :
High-voltage PSOI with complementary interface charge islands structure
Author :
Wu Lijuan ; Hu Shendong ; Zhang Bo ; Li Zhaoji
Author_Institution :
State Key Lab. of Electron. Thin Films & Integrated Devices, UESTC, Chengdu, China
Abstract :
A new complementary interface charge islands structure of PSOI high voltage device (CCI PSOI) is proposed, in which is characterized by a series of equidistant high concentration n+-regions and p+-regions on the top and bottom interfaces of dielectric buried layer, respectively. Complementary interface charge of top interface inversion holes and bottom interfaces inductived electrons effectively enhance the electric field of dielectric buried layer (EI) and reduce the electric field of silicon layer (ES), which both result in a high breakdown voltage (BV). The enhanced field ΔEI and reduced field ΔES by the accumulated interface charges reach to 420.9V/μm and 26.14V/μm, respectively, which makes BV of CCI PSOI increase to 526V from 230V of the conventional PSOI by two-dimensional simulation.
Keywords :
dielectric materials; semiconductor device breakdown; semiconductor device models; silicon-on-insulator; PSOI high voltage device; bottom interfaces inductived electrons; complementary interface charge islands structure; dielectric buried layer; electric field; high breakdown voltage; silicon layer; top interface inversion holes; two-dimensional simulation; voltage 230 V; voltage 526 V;
Conference_Titel :
Communications, Circuits and Systems (ICCCAS), 2010 International Conference on
Conference_Location :
Chengdu
Print_ISBN :
978-1-4244-8224-5
DOI :
10.1109/ICCCAS.2010.5581946
