High-voltage PSOI with complementary interface charge islands structure

Author

Wu Lijuan ; Hu Shendong ; Zhang Bo ; Li Zhaoji

Author_Institution

State Key Lab. of Electron. Thin Films & Integrated Devices, UESTC, Chengdu, China

fYear

2010

fDate

28-30 July 2010

Firstpage

499

Lastpage

502

Abstract

A new complementary interface charge islands structure of PSOI high voltage device (CCI PSOI) is proposed, in which is characterized by a series of equidistant high concentration n⁺-regions and p⁺-regions on the top and bottom interfaces of dielectric buried layer, respectively. Complementary interface charge of top interface inversion holes and bottom interfaces inductived electrons effectively enhance the electric field of dielectric buried layer (E_I) and reduce the electric field of silicon layer (E_S), which both result in a high breakdown voltage (BV). The enhanced field ΔE_I and reduced field ΔE_S by the accumulated interface charges reach to 420.9V/μm and 26.14V/μm, respectively, which makes BV of CCI PSOI increase to 526V from 230V of the conventional PSOI by two-dimensional simulation.

Keywords

dielectric materials; semiconductor device breakdown; semiconductor device models; silicon-on-insulator; PSOI high voltage device; bottom interfaces inductived electrons; complementary interface charge islands structure; dielectric buried layer; electric field; high breakdown voltage; silicon layer; top interface inversion holes; two-dimensional simulation; voltage 230 V; voltage 526 V;

fLanguage

English

Publisher

ieee

Conference_Titel

Communications, Circuits and Systems (ICCCAS), 2010 International Conference on

Conference_Location

Chengdu

Print_ISBN

978-1-4244-8224-5

Type

conf

DOI

10.1109/ICCCAS.2010.5581946

Filename

5581946