Static RAM generators with automated characterization techniques for a 0.5 micron triple-metal embedded array

Author

Sawhney, Puneet ; Rasheed, Haroon

Author_Institution

SGS-Thomson Microelectron., New Delhi, India

fYear

1995

fDate

4-7 Jan 1995

Firstpage

191

Abstract

This paper describes the design and development of module generators for metallized single-port and dual-port static RAMs (SPRAM and DPRAM) for a 0.5 micron embedded-array family. These generators offer an ASIC designer the ability to choose RAMs of user-defined size with some flexibility on the aspect ratio. An automatic generator characterisation (AGC) tool developed to efficiently characterize RAM generators is discussed

Keywords

SRAM chips; application specific integrated circuits; circuit CAD; integrated circuit design; 0.5 micron; ASIC design; SRAM chips; aspect ratio; automatic generator characterisation tool; dual-port static RAMs; metallized SRAMs; module generators; single-port static RAMs; static RAM generators; triple-metal embedded array; user-defined size; Application specific integrated circuits; Character generation; Circuit simulation; Data mining; Delay; Metallization; Microelectronics; Power generation; Solid modeling; Timing;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Design, 1995., Proceedings of the 8th International Conference on

Conference_Location

New Delhi

ISSN

1063-9667

Print_ISBN

0-8186-6905-5

Type

conf

DOI

10.1109/ICVD.1995.512104

Filename

512104

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2268877