DocumentCode :
2268958
Title :
CVD-diamond substrates for multi-chip modules (MCMs)
Author :
Naseem, H.A. ; Malshe, A.P. ; Beera, R.A. ; Haque, M.S. ; Brown, W.D. ; Schaper, L.W.
Author_Institution :
High Density Electron. Center, Arkansas Univ., Fayetteville, AR, USA
fYear :
1995
fDate :
4-7 Jan 1995
Firstpage :
194
Lastpage :
195
Abstract :
Diamond, the best thermal conductor known, is the ultimate choice as a substrate for three dimensional (3-D) multichip modules (MCMs) in the next generation compact, high power and high speed computers. It has only recently become available as a large area free-standing substrate fabricated using various chemical vapor deposition (CVD) techniques. There are several challenges and technological hurdles which must be resolved before diamond based MCMs becomes a reality. At HiDEC, University of Arkansas, we are actively involved in 1) designing diamond substrate based MCMs, 2) synthesis of diamond thin films and substrates, 3) polishing and planarizing diamond substrates, 4) laser drilling of via holes in diamond and, 5) metallization and dielectric coatings on diamond substrates for multi-layer interconnects (MLI). This paper presents a critical review of novel technologies that have been/are being developed at HiDEC for the fabrication of diamond based MCMs
Keywords :
CVD coatings; chemical vapour deposition; diamond; elemental semiconductors; laser beam machining; metallisation; multichip modules; polishing; substrates; 3D MCM; C; CVD-diamond substrates; chemical vapor deposition; diamond thin films; dielectric coatings; fabrication; laser drilling; metallization; multichip modules; multilayer interconnects; planarization; polishing; via holes; Chemical technology; Chemical vapor deposition; Conductors; Dielectric substrates; Dielectric thin films; Drilling; Metallization; Multichip modules; Optical design; Thermal conductivity;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Design, 1995., Proceedings of the 8th International Conference on
Conference_Location :
New Delhi
ISSN :
1063-9667
Print_ISBN :
0-8186-6905-5
Type :
conf
DOI :
10.1109/ICVD.1995.512107
Filename :
512107
Link To Document :
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