A more efficient approach for Monte Carlo simulation of deeply-channeled implanted profiles in single-crystal silicon

Author

Yang, S.-H. ; Lim, D. ; Morris, S. ; Tasch, A.F.

Author_Institution

Texas Univ., Austin, TX, USA

fYear

1994

fDate

5-6 Jun 1994

Firstpage

97

Lastpage

100

Abstract

In this paper we report new approach for the Monte Carlo simulation of deeply-channeled implanted profiles in single-crystal silicon with greatly improved efficiency. This approach has been successfully implemented in the UT Monte Carlo code (UT-MARLOWE). A time saving of up to 212X has been observed with a 4-stage simulation. A simulation of arsenic implants with 15 keV implant energy typically takes about 12 minutes on a workstation

Keywords

Monte Carlo methods; arsenic; digital simulation; doping profiles; elemental semiconductors; ion implantation; semiconductor device models; silicon; 15 keV; Monte Carlo simulation; Si:As; UT Monte Carlo code; UT-MARLOWE; deeply-channeled implanted profiles; digital simulation; four-stage simulation; implant energy; single-crystal silicon; Computational modeling; Discrete event simulation; Fabrication; Implants; Monte Carlo methods; Scattering; Semiconductor device noise; Semiconductor devices; Silicon; Workstations;

fLanguage

English

Publisher

ieee

Conference_Titel

Numerical Modeling of Processes and Devices for Integrated Circuits, 1994. NUPAD V., International Workshop on

Conference_Location

Honolulu, HI

Print_ISBN

0-7803-1867-6

Type

conf

DOI

10.1109/NUPAD.1994.343482

Filename

343482