Automatic proximity correction for 0.35 μm I-line photolithography

Recent advances in lithography enhancement techniques such as phase shifting masks (PSM´s) and off-axis illumination have raised the possibility of using I-line photolithography for 0.35μm generation ICs. It has become clear that in order to achieve the necessary line-width control, optical proximity effects must be taken into account in conjunction with these techniques. In this paper, we describe an automatic approach to optical proximity correction (OPC) that is both effective and fast. The work presented is a joint effort between SEMATECH, AT&T, and Trans Vector Technologies. To our knowledge, this is the first practical approach that can perform viable OPC on a real chip layout