Title :
A method of heterojunction bipolar transistor high frequency performance calculation
Author :
Khrenov, G. ; Ryzhii, V. ; Kartashov, S.
Author_Institution :
Aizu Univ., Japan
Abstract :
A numerical method based on the Fourier analysis of the collector current response to calculate high-frequency characteristics of the heterojunction bipolar transistors is proposed and implemented. The hot electron effects and high current phenomenon are taken into account by ensemble Monte Carlo particle simulation. The experimental results for the cut-off frequency and maximum oscillation frequency are compared with computed results to verify accuracy of the developed method
Keywords :
Fourier analysis; Monte Carlo methods; heterojunction bipolar transistors; hot carriers; semiconductor device models; Fourier analysis; collector current response; cut-off frequency; ensemble Monte Carlo particle simulation; heterojunction bipolar transistor; high current phenomenon; high frequency performance calculation; hot electron effects; maximum oscillation frequency; numerical method; Capacitance; Conducting materials; Cutoff frequency; Electrons; Equivalent circuits; Heterojunction bipolar transistors; Monte Carlo methods; Steady-state; Tellurium; Voltage;
Conference_Titel :
Numerical Modeling of Processes and Devices for Integrated Circuits, 1994. NUPAD V., International Workshop on
Conference_Location :
Honolulu, HI
Print_ISBN :
0-7803-1867-6
DOI :
10.1109/NUPAD.1994.343488
