A method of heterojunction bipolar transistor high frequency performance calculation

Author

Khrenov, G. ; Ryzhii, V. ; Kartashov, S.

Author_Institution

Aizu Univ., Japan

fYear

1994

fDate

5-6 Jun 1994

Firstpage

71

Lastpage

74

Abstract

A numerical method based on the Fourier analysis of the collector current response to calculate high-frequency characteristics of the heterojunction bipolar transistors is proposed and implemented. The hot electron effects and high current phenomenon are taken into account by ensemble Monte Carlo particle simulation. The experimental results for the cut-off frequency and maximum oscillation frequency are compared with computed results to verify accuracy of the developed method

Keywords

Fourier analysis; Monte Carlo methods; heterojunction bipolar transistors; hot carriers; semiconductor device models; Fourier analysis; collector current response; cut-off frequency; ensemble Monte Carlo particle simulation; heterojunction bipolar transistor; high current phenomenon; high frequency performance calculation; hot electron effects; maximum oscillation frequency; numerical method; Capacitance; Conducting materials; Cutoff frequency; Electrons; Equivalent circuits; Heterojunction bipolar transistors; Monte Carlo methods; Steady-state; Tellurium; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Numerical Modeling of Processes and Devices for Integrated Circuits, 1994. NUPAD V., International Workshop on

Conference_Location

Honolulu, HI

Print_ISBN

0-7803-1867-6

Type

conf

DOI

10.1109/NUPAD.1994.343488

Filename

343488