Title :
Influence of heat flux on the accuracy of hydrodynamic models for ultra-short Si MOSFETs
Author :
Bork, I. ; Jungemann, Chr ; Meinerzhagen, B. ; Engl, W.L.
Author_Institution :
Inst. fur Thoer. Elektrotech., Aachen Univ., Germany
Abstract :
The modeling accuracy of the generalized hydrodynamic model for ultra-short MOSFETs with Leff=0.1 μm is examined using a consistent Monte Carlo model as reference. It is shown that with a proper modeling of heat flux the generalized hydrodynamic model is still sufficiently accurate even for such small devices
Keywords :
MOSFET; Monte Carlo methods; elemental semiconductors; impact ionisation; semiconductor device models; silicon; 0.1 micron; consistent Monte Carlo model; heat flux; hydrodynamic models; modeling accuracy; small devices; ultra-short Si MOSFETs; Current density; Electrons; Electrostatics; FETs; Hydrodynamics; Impact ionization; MOSFETs; Monte Carlo methods; Temperature; Voltage;
Conference_Titel :
Numerical Modeling of Processes and Devices for Integrated Circuits, 1994. NUPAD V., International Workshop on
Conference_Location :
Honolulu, HI
Print_ISBN :
0-7803-1867-6
DOI :
10.1109/NUPAD.1994.343490
