Transient impact ionization in bulk Si [MOS devices]

Author

Iizuka, Takahiro ; Kato, Haruo

Author_Institution

Microelectron. Res. Labs., NEC Corp., Kanagawa, Japan

fYear

1994

fDate

5-6 Jun 1994

Firstpage

59

Lastpage

62

Abstract

The generation rate, G_ii, due to impact ionization and the impact ionization coefficient α in bulk Si are calculated from carrier distribution functions, solving the k-space Boltzmann transport equation. G_ii and α are dependent on transients, and are not universal with respect to average energy, which facts originate in the different structures in k-space distribution function even at the same average energy. In such cases, the conventional relation of αJ (where J is the current density) fails to predict G_ii, so far as one takes α for the steady-state α _w defined as a function of average energy

Keywords

Boltzmann equation; MIS devices; carrier density; elemental semiconductors; hot carriers; impact ionisation; silicon; transient analysis; MOS devices; Si-SiO₂; average energy; bulk Si; carrier distribution functions; current density; generation rate; hot carriers; k-space Boltzmann transport equation; transient impact ionization; Distribution functions; Electron mobility; Hot carriers; Impact ionization; MOS devices; Microelectronics; Nonuniform electric fields; Occupational stress; Scattering; Steady-state;

fLanguage

English

Publisher

ieee

Conference_Titel

Numerical Modeling of Processes and Devices for Integrated Circuits, 1994. NUPAD V., International Workshop on

Conference_Location

Honolulu, HI

Print_ISBN

0-7803-1867-6

Type

conf

DOI

10.1109/NUPAD.1994.343491

Filename

343491