DocumentCode
2269224
Title
Ion and neutral inertial effects in inductively coupled plasmas
Author
Collison, W.Z. ; Kushner, M.J.
Author_Institution
Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
fYear
1995
fDate
5-8 June 1995
Firstpage
128
Abstract
Summary form only given. Inductively coupled plasmas (ICPs) are currently being investigated as high plasma density (>10/sup 11/-10/sup 12/ cm/sup -3/), low gas pressure (<10-20 mTorr) sources for semiconductor etching and deposition. Development of models for these devices has been challenging due to neutral and ion transport being in a transition regime between continuum and molecular flow. A 2-dimensional (r,z) hybrid model has previously been developed to study ICP sources. The simulation consists of an electromagnetic module, an electron Monte Carlo simulation, and a fluid-chemical kinetics simulation; and offline hydrodynamic and plasma chemistry Monte Carlo simulations. In the parameter space of interest, inertial effects, momentum transfer between advectively hot ions and neutrals, and jetting of input gases is expected to be important. In this work, we have improved upon the fluid-chemical kinetics simulation by including ion and neutral momentum equations for all species. In doing so, time dependent and inertial transport effects are included. Momentum transfer collisions between all heavy species (neutral-neutral, neutral-ion, ion-ion) are accounted for. The advective flow field is established by specifying flow rates at the input and output ports as part ofthe boundary conditions. The output flow is dynamically adjusted to keep the average pressure in the reactor constant.
Keywords
Monte Carlo methods; flow; plasma collision processes; plasma density; plasma flow; plasma kinetic theory; plasma simulation; plasma transport processes; sputter etching; 10 to 20 mtorr; 2D hybrid model; advectively hot ions; electromagnetic module; electron Monte Carlo simulation; fluid-chemical kinetics simulation; inductively coupled plasmas; inertial effects; inertial transport effects; input gases; ion inertial effects; ion transport; jetting; molecular flow; momentum transfer; momentum transfer collisions; neutral inertial effects; offline hydrodynamic Monte Carlo simulations; plasma chemistry Monte Carlo simulations; semiconductor deposition; semiconductor etching; time dependent effects; transition regime; Electrons; Etching; Hydrodynamics; Kinetic theory; Plasma applications; Plasma chemistry; Plasma density; Plasma devices; Plasma simulation; Plasma sources;
fLanguage
English
Publisher
ieee
Conference_Titel
Plasma Science, 1995. IEEE Conference Record - Abstracts., 1995 IEEE International Conference on
Conference_Location
Madison, WI, USA
ISSN
0730-9244
Print_ISBN
0-7803-2669-5
Type
conf
DOI
10.1109/PLASMA.1995.531545
Filename
531545
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