Title :
Incorporating full band-structure effects in the spherical harmonics expansion of the Boltzmann transport equation
Author :
Vecchi, M.C. ; Ventura, D. ; Gnudi, A. ; Baccarani, G.
Author_Institution :
Bologna Univ., Italy
Abstract :
Band-structure effects are incorporated in the framework of the Spherical-Harmonic Expansion (SHE) approximation of the Boltzmann Transport Equation (BTE) for electrons in silicon. The density of states (DOS) and the group velocity (GV) are modeled as energy-dependent functions obtained from the full-band system. Scattering parameters are tuned by fitting experimental and Monte Carlo data
Keywords :
Boltzmann equation; Monte Carlo methods; S-parameters; band structure; electronic density of states; elemental semiconductors; harmonic analysis; impact ionisation; silicon; Boltzmann transport equation; Monte Carlo data; Si; density of states; energy-dependent functions; full band-structure effects; group velocity; scattering parameters; spherical harmonics expansion; Boltzmann equation; Electrons; Impact ionization; Monte Carlo methods; Nonlinear optics; Optical scattering; Phonons; Shape; Silicon; Testing;
Conference_Titel :
Numerical Modeling of Processes and Devices for Integrated Circuits, 1994. NUPAD V., International Workshop on
Conference_Location :
Honolulu, HI
Print_ISBN :
0-7803-1867-6
DOI :
10.1109/NUPAD.1994.343492
