Title :
Modeling of Ti physical vapor deposition systems
Author :
Bang, David S. ; McVittie, James P. ; Islamraja, Mohammad M. ; Saraswat, Krishna C. ; Krivokapic, Zoran ; Cheung, Robin
Author_Institution :
Center for Integrated Syst., Stanford Univ., CA, USA
Abstract :
A novel model for simulating Physical Vapor Deposition (PVD) systems is presented. The model determines profile evolution for deposition in trenches and vias by considering the major components in a PVD system. The simulator incorporates the effects of non-uniform target erosion, collimation, gas phase collisions, and particle sticking coefficients on profile evolution. Simulations for sputtered Ti are compared against experimental results
Keywords :
digital simulation; semiconductor process modelling; sputter deposition; titanium; IC fabrication; PVD system; Ti; collimation; gas phase collisions; nonuniform target erosion; particle sticking coefficients; physical vapor deposition systems; profile evolution; trenches; vias; Atherosclerosis; Chemical vapor deposition; Circuit simulation; Collimators; Equations; Etching; Fabrication; Geometry; Integrated circuit modeling; Semiconductor device modeling;
Conference_Titel :
Numerical Modeling of Processes and Devices for Integrated Circuits, 1994. NUPAD V., International Workshop on
Conference_Location :
Honolulu, HI
Print_ISBN :
0-7803-1867-6
DOI :
10.1109/NUPAD.1994.343495
