Modeling of Ti physical vapor deposition systems

Author

Bang, David S. ; McVittie, James P. ; Islamraja, Mohammad M. ; Saraswat, Krishna C. ; Krivokapic, Zoran ; Cheung, Robin

Author_Institution

Center for Integrated Syst., Stanford Univ., CA, USA

fYear

1994

fDate

5-6 Jun 1994

Firstpage

41

Lastpage

44

Abstract

A novel model for simulating Physical Vapor Deposition (PVD) systems is presented. The model determines profile evolution for deposition in trenches and vias by considering the major components in a PVD system. The simulator incorporates the effects of non-uniform target erosion, collimation, gas phase collisions, and particle sticking coefficients on profile evolution. Simulations for sputtered Ti are compared against experimental results

Keywords

digital simulation; semiconductor process modelling; sputter deposition; titanium; IC fabrication; PVD system; Ti; collimation; gas phase collisions; nonuniform target erosion; particle sticking coefficients; physical vapor deposition systems; profile evolution; trenches; vias; Atherosclerosis; Chemical vapor deposition; Circuit simulation; Collimators; Equations; Etching; Fabrication; Geometry; Integrated circuit modeling; Semiconductor device modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Numerical Modeling of Processes and Devices for Integrated Circuits, 1994. NUPAD V., International Workshop on

Conference_Location

Honolulu, HI

Print_ISBN

0-7803-1867-6

Type

conf

DOI

10.1109/NUPAD.1994.343495

Filename

343495