Title :
Analysis of temperature dependence of Si-Ge HBT
Author :
Krishna, G. Hari Rama ; Aditya, Amit Kr ; Chakrabarti, N.B. ; Banerjee, Swapna
Author_Institution :
Dept. of Electron. & Electr. Commun. Eng., Indian Inst. of Technol., Kharagpur, India
Abstract :
In this paper the dependence of characteristics of SiGe heterojunction bipolar transistors on Ge mole-fraction and also variation of gain with temperature are presented. The simulation is carried out using a two dimensional device simulator, BISOF, based on finite element method. It is observed that the current gain of graded HBT improves when the temperature falls from 300 K to 200 K which matches well with the available experimental results
Keywords :
Ge-Si alloys; finite element analysis; heterojunction bipolar transistors; semiconductor device models; semiconductor materials; simulation; thermal analysis; 200 to 300 K; BISOF; FEM; Ge mole-fraction; SiGe; current gain; finite element method; graded HBT; heterojunction bipolar transistors; temperature dependence; two dimensional device simulator; Doping; Equations; Finite element methods; Germanium silicon alloys; Heterojunction bipolar transistors; Ohmic contacts; Silicon alloys; Silicon germanium; Temperature dependence; Voltage control;
Conference_Titel :
VLSI Design, 1995., Proceedings of the 8th International Conference on
Conference_Location :
New Delhi
Print_ISBN :
0-8186-6905-5
DOI :
10.1109/ICVD.1995.512122
