DocumentCode :
2269437
Title :
Analysis of amorphous-silicon devices
Author :
Valdinoci, M. ; Gnudi, A. ; Rudan, M. ; Fortunato, G.
Author_Institution :
Bologna Univ., Italy
fYear :
1994
fDate :
5-6 Jun 1994
Firstpage :
19
Lastpage :
22
Abstract :
In recent years, Amorphous-Silicon devices have found interesting applications in large-area devices, such as the driving circuitry for flat-panel displays, scanner and print arrays, or chemical sensors. For this reason, many investigations have been carried out for the purpose of improving their performance, especially as far as stability and speed are concerned. To describe their electrical characteristics, analytical models or ad hoc numerical analyses have been proposed elsewhere. In this paper, the implementation of the model for amorphous silicon within the general-purpose simulator HFIELDS is shown, along with an application to a realistic case
Keywords :
amorphous semiconductors; carrier mobility; digital simulation; electron-hole recombination; elemental semiconductors; semiconductor device models; silicon; thin film transistors; HFIELDS; Si; TFTs; amorphous-silicon devices; chemical sensors; driving circuitry; flat-panel displays; general-purpose simulator; large-area devices; print arrays; speed; stability; Amorphous silicon; Charge carrier processes; Circuits; Conducting materials; Displays; Electron traps; Impurities; Poisson equations; Radiative recombination; Sensor arrays;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Numerical Modeling of Processes and Devices for Integrated Circuits, 1994. NUPAD V., International Workshop on
Conference_Location :
Honolulu, HI
Print_ISBN :
0-7803-1867-6
Type :
conf
DOI :
10.1109/NUPAD.1994.343500
Filename :
343500
Link To Document :
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