Analytical calculations of a figure of merit for novel MOSFET architecture for the sub 0.25 μm range

We present a simple analytical model to evaluate the Short Channel Effect (SCE) and to compare quantitatively how different MOSFET architectures can suppress it. The resulting figure of merit will allow us to rank the structures by their SCE suppressing ability. The model itself is based on an explicit solution of the 2D Poisson equation. A discussion on this model and on the limits of the existing solutions to model the SCE is given. Choosing carefully the boundary conditions and including efficiently the junction depth results in model improvements. The model can act as a framework for a full 2D theory