MMIC LNAs for Radioastronomy Applications Using Advanced Industrial 70 nm Metamorphic Technology

Author

Ciccognani, W. ; Limiti, E. ; Longhi, P.E. ; Renvoisè, M.

Author_Institution

Electron. Eng. Dept., Univ. of Roma Tor Vergata, Rome, Italy

fYear

2009

fDate

11-14 Oct. 2009

Firstpage

1

Lastpage

2

Abstract

A set of monolithic low-noise amplifiers have been designed and realised making use of an advanced industrial GaAs 70 nm metamorphic technology with high indium content. Operating frequencies of the realised amplifiers span from C-to W-band, with resulting performance in line with the requirements of many advanced radioastronomy applications. As an example, 2.7 dB NF from 75 to 90 GHz associated to 25 dB gain and 1.3 typical NF from 30 to 50 GHz with 30 dB gain have been achieved.

Keywords

III-V semiconductors; MMIC amplifiers; field effect MIMIC; field effect MMIC; gallium arsenide; low noise amplifiers; millimetre wave amplifiers; radioastronomy; radiotelescopes; C-band; GaAs; HEMT; MMIC LNA; W-band; advanced industrial metamorphic technology; frequency 30 GHz to 50 GHz; frequency 75 GHz to 90 GHz; gain 25 dB; gain 30 dB; millimetre wave FET amplifiers; monolithic low-noise amplifiers; noise figure 1.3 dB; noise figure 2.7 dB; radioastronomy applications; size 70 nm; Chemical technology; Frequency; Gallium arsenide; Indium; Low-noise amplifiers; MMICs; Noise measurement; Radiofrequency amplifiers; Semiconductor device noise; Space technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductor Integrated Circuit Symposium, 2009. CISC 2009. Annual IEEE

Conference_Location

Greensboro, NC

ISSN

1550-8781

Print_ISBN

978-1-4244-5191-3

Electronic_ISBN

1550-8781

Type

conf

DOI

10.1109/csics.2009.5315556

Filename

5315556