DocumentCode :
2269608
Title :
A 4-Bit Passive Phase Shifter for Automotive Radar Applications in 0.13 μm CMOS
Author :
Kim, Sang Young ; Rebeiz, Gabriel M.
Author_Institution :
ECE Dept., Univ. of California, San Diego, La Jolla, CA, USA
fYear :
2009
fDate :
11-14 Oct. 2009
Firstpage :
1
Lastpage :
4
Abstract :
This paper presents a 67-78 GHz 4-bit passive phase shifter using CMOS switches available in the 0.12 mum SiGe BiCMOS process (IBM 8HP). The phase shifter is based on a low-pass pi-network and CMOS passive transistors. The phase shifter achieves -19.2+/-3.7 dB of gain including pad loss at 77 GHz. The RMS phase error is less than 11.25deg and the RMS gain error is less than 2.5 dB over the 67 78 GHz range. The total chip size is 450 times 300 mum2 (0.135 mm2), excluding pads, and the chip consumes virtually no power. The measured P1dB is > +8 dBm at 77 GHz and the simulated IIP3 is > 22 dBm, making it possible to precede this design with a high gain LNA without loss of system linearity or input power handling.
Keywords :
automotive electronics; phase shifters; road vehicle radar; semiconductor switches; 4-bit passive phase shifter; CMOS passive transistor; CMOS switches; RMS gain error; RMS phase error; automotive radar application; complementary metal-oxide-semiconductor; frequency 67 GHz to 78 GHz; low noise amplifier; size 0.12 mum; Automotive engineering; BiCMOS integrated circuits; CMOS process; Gain; Germanium silicon alloys; Phase shifters; Power measurement; Radar applications; Silicon germanium; Switches;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium, 2009. CISC 2009. Annual IEEE
Conference_Location :
Greensboro, NC
ISSN :
1550-8781
Print_ISBN :
978-1-4244-5191-3
Electronic_ISBN :
1550-8781
Type :
conf
DOI :
10.1109/csics.2009.5315586
Filename :
5315586
Link To Document :
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