DocumentCode :
2269768
Title :
A 0.25μm InP DHBT 200GHz+ Static Frequency Divider
Author :
D´Amore, M. ; Monier, C. ; Lin, S. ; Oyama, B. ; Scott, D. ; Kaneshiro, E. ; Gutierrez-Aitken, A. ; Oki, A.
Author_Institution :
Northrop Grumman Aerosp. Syst., Redondo Beach, CA, USA
fYear :
2009
fDate :
11-14 Oct. 2009
Firstpage :
1
Lastpage :
4
Abstract :
Static frequency dividers are widely used technology performance benchmark circuits. Using a 0.25 mum 530 GHz fT I 600 GHz+ fmax InP DHBT process, a static frequency divider circuit has been designed, fabricated, and measured to operate up to 200.6 GHz. The divide-by-2 core flip/flop dissipates 228 mW.
Keywords :
frequency dividers; heterojunction bipolar transistors; DHBT process; double heterojunction bipolar transistor; frequency 530 GHz; frequency 600 GHz; power 228 mW; size 0.25 mum; static frequency divider circuit; technology performance benchmark circuits; Current density; DH-HEMTs; Dielectrics; Frequency conversion; Frequency measurement; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Integrated circuit technology; Space technology;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium, 2009. CISC 2009. Annual IEEE
Conference_Location :
Greensboro, NC
ISSN :
1550-8781
Print_ISBN :
978-1-4244-5191-3
Electronic_ISBN :
1550-8781
Type :
conf
DOI :
10.1109/csics.2009.5315625
Filename :
5315625
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2269768
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