DocumentCode :
2269770
Title :
Hot and cold phonons induced by electric field and resonant Raman scattering in GaN/AlN triangular quantum well
Author :
Xu, Guibao ; Tripathy, Suvranta K. ; Mu, Xiaodong ; Ding, Yujie J. ; Wang, Kejia ; Yu, Cao ; Jena, Debdeep ; Khurgin, Jacob B.
Author_Institution :
Dept. of Electr. & Comput. Eng., Lehigh Univ., Bethlehem, PA
fYear :
2008
fDate :
4-9 May 2008
Firstpage :
1
Lastpage :
2
Abstract :
We have evidenced hot and cold longitudinal-optical (LO) phonons induced by electric field and resonant Raman scattering in GaN/AlN triangular quantum well, probed by first-order and second-order resonant Raman scattering of 3-ps light pulses.
Keywords :
III-V semiconductors; Raman spectra; aluminium compounds; electric fields; gallium compounds; phonons; semiconductor quantum wells; wide band gap semiconductors; GaN-AlN; cold phonons; electric field; hot phonons; light pulses; longitudinal-optical phonons; resonant Raman scattering; semiconductor quantum wells; time 3 ps; triangular quantum well; Electrons; Gallium nitride; Phonons; Photonic band gap; Pulse measurements; Raman scattering; Resonance light scattering; Spectroscopy; Temperature; Wavelength measurement; (190.5650) Raman effect; (190.7220) Upconversion; (300.6330) Spectroscopy, inelastic scattering including Raman; (300.6450) Spectroscopy, Raman;
fLanguage :
English
Publisher :
iet
Conference_Titel :
Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-55752-859-9
Type :
conf
Filename :
4572972
Link To Document :
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