Title :
Control of the third-order nonlinearities in a GaAs/AlGaAs superlattice by ion implantation quantum well intermixing
Author :
Wagner, S.J. ; Helmy, A.S. ; Aitchison, J.S. ; Younis, U. ; Holmes, B.M. ; Hutchings, D.C.
Author_Institution :
Edward S. Rogers Sr. Dept. of Electr. & Comput. Eng., Univ. of Toronto, Toronto, ON
Abstract :
Self-phase modulation was observed in GaAs/AlGaAs superlattice-core waveguides that were quantum well intermixed by ion implantation. The band gap was blue-shifted by 68 nm and the Kerr effect was suppressed by 67% after intermixing.
Keywords :
aluminium compounds; gallium arsenide; ion implantation; multiwave mixing; optical Kerr effect; optical control; optical materials; photonic band gap; self-phase modulation; semiconductor quantum wells; semiconductor superlattices; spectral line shift; GaAs-AlGaAs; GaAs/AlGaAs superlattice; Kerr effect; band gap; blue shift; ion implantation; quantum well intermixing; self-phase modulation; third-order nonlinearity; Control nonlinearities; Gallium arsenide; Ion implantation; Kerr effect; Nonlinear optics; Optical modulation; Optical solitons; Optical superlattices; Optical waveguides; Photonic band gap; (190.3270) Kerr effect; (190.5970) Semiconductor nonlinear optics including MQW;
Conference_Titel :
Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-55752-859-9
