Control of the third-order nonlinearities in a GaAs/AlGaAs superlattice by ion implantation quantum well intermixing

Author

Wagner, S.J. ; Helmy, A.S. ; Aitchison, J.S. ; Younis, U. ; Holmes, B.M. ; Hutchings, D.C.

Author_Institution

Edward S. Rogers Sr. Dept. of Electr. & Comput. Eng., Univ. of Toronto, Toronto, ON

fYear

2008

fDate

4-9 May 2008

Firstpage

1

Lastpage

2

Abstract

Self-phase modulation was observed in GaAs/AlGaAs superlattice-core waveguides that were quantum well intermixed by ion implantation. The band gap was blue-shifted by 68 nm and the Kerr effect was suppressed by 67% after intermixing.

Keywords

aluminium compounds; gallium arsenide; ion implantation; multiwave mixing; optical Kerr effect; optical control; optical materials; photonic band gap; self-phase modulation; semiconductor quantum wells; semiconductor superlattices; spectral line shift; GaAs-AlGaAs; GaAs/AlGaAs superlattice; Kerr effect; band gap; blue shift; ion implantation; quantum well intermixing; self-phase modulation; third-order nonlinearity; Control nonlinearities; Gallium arsenide; Ion implantation; Kerr effect; Nonlinear optics; Optical modulation; Optical solitons; Optical superlattices; Optical waveguides; Photonic band gap; (190.3270) Kerr effect; (190.5970) Semiconductor nonlinear optics including MQW;

fLanguage

English

Publisher

iet

Conference_Titel

Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on

Conference_Location

San Jose, CA

Print_ISBN

978-1-55752-859-9

Type

conf

Filename

4572973