Low-crosstalk semiconductor optical amplifiers

Summary form only given. We have previously proposed that using a waveguide optical amplifier with an exponentially increased gain profile we can greatly reduce the crosstalk between different wavelength channels. In this work, we propose to use the selective-area-growth (SAG)-technique produced gain materials to implement such kind of exponentially increased gain material, which requires only a single electrode and with simple uniform current injection. The SAG type of material uses oxide masks on top of semiconductor wafers to obtain materials with different wavelengths in one single crystal growth. The proposed method can reduce the crosstalk effect, improve the SOA performance, and makes it compatible to the EDFA. We believe that it will make the SOA an attractive candidate for optical amplification and switching applications at the metro and access area. It can also help SOA to serve as a gain medium for future photonic integrations.