An Image Reject Mixer for High-Speed E-Band (71-76, 81-86 GHz) Wireless Communication

Author

Gavell, Marcus ; Ferndahl, Mattias ; Gunnarsson, Sten E. ; Abbasi, Morteza ; Zirath, Herbert

Author_Institution

Microwave Electron. Lab., Chalmers Univ. of Technol., Goteborg, Sweden

fYear

2009

fDate

11-14 Oct. 2009

Firstpage

1

Lastpage

4

Abstract

In this paper, the design and characterization of a broadband image reject mixer for the next generation of point to-point microwave links is presented. The manufacturing has been made in a commercially available 0.15 mum gate length GaAs mHEMT technology. The measured performance demonstrates a conversion loss of 9 dB and an image rejection ratio of 25 dB on average across the full E-band (71-76 and 81-86 GHz). Performance peaks at 77 GHz with conversion loss of 7 dB and image rejection of 40 dB. Furthermore, these results have been achieved with a LO power requirement of 4 dBm. To the best of the authors´ knowledge this is the first reported image reject mixer suitable for the full E-band.

Keywords

III-V semiconductors; gallium arsenide; high electron mobility transistors; microwave links; millimetre wave mixers; millimetre wave transistors; wide band gap semiconductors; GaAs; broadband image reject mixer; frequency 71 GHz to 76 GHz; frequency 81 GHz to 86 GHz; high-speed E-band wireless communication; loss 7 dB; loss 9 dB; point to-point microwave links; size 0.15 mum; Filters; Gallium arsenide; Image converters; Noise cancellation; Performance loss; RF signals; Radio frequency; Semiconductor device noise; Wireless communication; mHEMTs;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductor Integrated Circuit Symposium, 2009. CISC 2009. Annual IEEE

Conference_Location

Greensboro, NC

ISSN

1550-8781

Print_ISBN

978-1-4244-5191-3

Electronic_ISBN

1550-8781

Type

conf

DOI

10.1109/csics.2009.5315655

Filename

5315655