DocumentCode :
2270101
Title :
High-Resistivity SOI CMOS Cellular Antenna Switches
Author :
Carroll, M. ; Kerr, D. ; Iversen, C. ; Tombak, A. ; Pierres, J.-B. ; Mason, P. ; Costa, J.
Author_Institution :
RF Micro Devices, Greensboro, NC, USA
fYear :
2009
fDate :
11-14 Oct. 2009
Firstpage :
1
Lastpage :
4
Abstract :
Results for cellular antenna switches using high resistivity silicon-on-insulator (SOI) CMOS technology are presented. The performance of SOI RF switch FETs is presented and compared to a production GaAs pHEMT technology. Data from prototype high-resistivity SOI RF switch designs is presented and compared to pHEMT based designs.
Keywords :
CMOS integrated circuits; antennas; field effect transistors; silicon-on-insulator; SOI CMOS; SOI RF switch FET; cellular antenna switches; silicon-on-insulator; CMOS technology; Conductivity; FETs; Gallium arsenide; PHEMTs; Production; Prototypes; Radio frequency; Silicon on insulator technology; Switches;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium, 2009. CISC 2009. Annual IEEE
Conference_Location :
Greensboro, NC
ISSN :
1550-8781
Print_ISBN :
978-1-4244-5191-3
Electronic_ISBN :
1550-8781
Type :
conf
DOI :
10.1109/csics.2009.5315667
Filename :
5315667
Link To Document :
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