DocumentCode :
2270191
Title :
A novel monolithic linearized HEMT LNA using HBT tuneable active feedback
Author :
Kobayashi, K.W. ; Streit, D.C. ; Oki, A.K. ; Umemoto, D.K. ; Block, T.R.
Author_Institution :
Electron. & Technol. Div., TRW Inc., Redondo Beach, CA, USA
Volume :
3
fYear :
1996
fDate :
17-21 June 1996
Firstpage :
1217
Abstract :
For the first time, a novel HBT active feedback circuit is employed with a HEMT LNA which improves linearity (IP3) and gain-bandwidth performance without significantly impacting noise figure. The HEMT and HBT circuits are monolithically integrated using selective molecular beam epitaxy (MBE). The HEMT LNA achieves a nominal gain of 9 dB and noise figure of 2.5-3 dB from 1-11 GHz. By adjusting the bias of the HBT active feedback circuit, positive feedback can be induced which can increase the gain bandwidth from 11 to 16 GHz. In addition, the IP3 can be tuned from less than 20 dBm to >24 dBm across a 1-11 GHz band with a peak improvement of 10 dB. At S-band, as much as 20 dB reduction in IM3 products has been demonstrated using the HBT active feedback. Compared to an equivalent design which employs resistive feedback only, the active feedback design achieves a 50% improvement in gain-bandwidth and a 4-10 dB improvement in IP3 while maintaining comparable noise figure performance and consuming only 15% additional dc power. This HBT active feedback linearization technique is a cost effective means of improving the linearity of HEMT-based LNA/receiver MMICs for use in multi-carrier wireless communications.
Keywords :
HEMT integrated circuits; MMIC amplifiers; bipolar analogue integrated circuits; feedback amplifiers; heterojunction bipolar transistors; 1 to 11 GHz; 11 to 16 GHz; 2.5 to 3 dB; 9 dB; HBT tuneable active feedback circuit; HEMT LNA; IM3 product; IP3; MMIC receiver; S-band; gain bandwidth; linearity; linearization; monolithic integration; multi-carrier wireless communications; noise figure; selective molecular beam epitaxy; Bandwidth; Feedback circuits; Gain; HEMTs; Heterojunction bipolar transistors; Linearity; Linearization techniques; Molecular beam epitaxial growth; Noise figure; Tunable circuits and devices;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest, 1996., IEEE MTT-S International
Conference_Location :
San Francisco, CA, USA
ISSN :
0149-645X
Print_ISBN :
0-7803-3246-6
Type :
conf
DOI :
10.1109/MWSYM.1996.512155
Filename :
512155
Link To Document :
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