Title :
Transient electromagnetically induced transparency in InGaAs quantum dots
Author :
Marcinkevicius, S. ; Gusterov, A. ; Reithmaier, J.P.
Author_Institution :
Dept. of Microelectron. & Appl. Phys., R. Inst. of Technol., Kista
Abstract :
Electromagnetically induced transparency (EIT) based on exciton spin transitions is observed in InGaAs quantum dots. Inhomogeneous broadening of the quantum dot ensemble, detrimental for EIT, is effectively reduced by using spectrally narrow pulses.
Keywords :
III-V semiconductors; excitons; gallium arsenide; indium compounds; semiconductor quantum dots; transparency; InGaAs; exciton spin transitions; inhomogeneous ensemble broadening; quantum dots; spectrally narrow pulses; transient electromagnetically induced transparency; Absorption; Electromagnetic transients; Excitons; Indium gallium arsenide; Optical buffering; Optical control; Optical pulses; Polarization; Quantum dots; Space vector pulse width modulation; 270.1670; 320.7130;
Conference_Titel :
Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-55752-859-9
