Title :
0.5-2.5 GHz, 10W MMIC Power Amplifier in GaN HEMT Technology
Author :
Krishnamurth, K. ; Green, D. ; Vetury, R. ; Poulton, M. ; Martin, J.
Author_Institution :
High Power Product Line, RF Micro Devices Inc., Charlotte, NC, USA
Abstract :
We report a broadband lossy matched GaN on SiC HEMT power amplifier MMIC with 15 dB gain, 0.5-2.5 GHz bandwidth, 9-13.6 W CW output power and 44.9-63.6% drain efficiency over the band. The amplifier operates from a 48 V drain supply and is packaged in a ceramic S08 package. These amplifiers are intended for use in wideband digital communication applications.
Keywords :
MMIC power amplifiers; broadband networks; ceramic packaging; digital communication; gallium compounds; high electron mobility transistors; GaN; GaN HEMT technology; MMIC; ceramic package; frequency 0.5 GHz to 2.5 GHz; power 10 W; power amplifier; wideband digital communication; Bandwidth; Broadband amplifiers; Gain; Gallium nitride; HEMTs; MMICs; Packaging; Power amplifiers; Power generation; Silicon carbide;
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium, 2009. CISC 2009. Annual IEEE
Conference_Location :
Greensboro, NC
Print_ISBN :
978-1-4244-5191-3
Electronic_ISBN :
1550-8781
DOI :
10.1109/csics.2009.5315739
