Title :
Bias-Dependent "Cold-(H)FET" modeling
Author :
Stiebler, W. ; Matthes, M. ; Bock, G. ; Koppel, T. ; Schafer, A.
Author_Institution :
Inst. of Radio Frequency Eng., Tech. Univ. Berlin, Germany
Abstract :
A bias-dependent model for MESFET and HFET devices under zero drain bias pinched-off conditions is proposed. Parasitic capacitances are evaluated from bias-dependent Y parameters over the whole frequency range. For the first time, it is possible to clearly distinguish between all intrinsic and extrinsic capacitances by considering the distributed nature of the device.
Keywords :
Schottky gate field effect transistors; capacitance; junction gate field effect transistors; microwave field effect transistors; semiconductor device models; HFET; MESFET; MMIC applications; Y parameters; bias-dependent model; cold FET; distributed device; parasitic capacitance; pinch-off; Equivalent circuits; FETs; Frequency; HEMTs; MESFETs; MODFETs; Matrix converters; Parasitic capacitance; Transmission line matrix methods; Voltage;
Conference_Titel :
Microwave Symposium Digest, 1996., IEEE MTT-S International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3246-6
DOI :
10.1109/MWSYM.1996.512177
