DocumentCode
2270725
Title
Bias-Dependent "Cold-(H)FET" modeling
Author
Stiebler, W. ; Matthes, M. ; Bock, G. ; Koppel, T. ; Schafer, A.
Author_Institution
Inst. of Radio Frequency Eng., Tech. Univ. Berlin, Germany
Volume
3
fYear
1996
fDate
17-21 June 1996
Firstpage
1313
Abstract
A bias-dependent model for MESFET and HFET devices under zero drain bias pinched-off conditions is proposed. Parasitic capacitances are evaluated from bias-dependent Y parameters over the whole frequency range. For the first time, it is possible to clearly distinguish between all intrinsic and extrinsic capacitances by considering the distributed nature of the device.
Keywords
Schottky gate field effect transistors; capacitance; junction gate field effect transistors; microwave field effect transistors; semiconductor device models; HFET; MESFET; MMIC applications; Y parameters; bias-dependent model; cold FET; distributed device; parasitic capacitance; pinch-off; Equivalent circuits; FETs; Frequency; HEMTs; MESFETs; MODFETs; Matrix converters; Parasitic capacitance; Transmission line matrix methods; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1996., IEEE MTT-S International
Conference_Location
San Francisco, CA, USA
ISSN
0149-645X
Print_ISBN
0-7803-3246-6
Type
conf
DOI
10.1109/MWSYM.1996.512177
Filename
512177
Link To Document