Title :
High Linearity AlGaAs/InGaAs Pseudomorphic HEMT Driver Amplifier Using Tunable Field-Plate Voltage Technology
Author :
Cheng, Chia-Shih ; Lin, Shao-Wei ; Fu, Jeffrey S. ; Chiu, Hsien-Chin
Author_Institution :
Dept. of Electron. Eng., Chang Gung Univ., Taoyuan, Taiwan
Abstract :
A high-linearity AlGaAs/InGaAs pseudomorphic HEMT RF driver amplifier was developed using a tunable field-plate (FP) bias voltage technology in this study. In order to improve the circuit linearity performance, an FP device was employed at the output stage to provide an additional mechanism to suppress the power of the second and third-order harmonics in a two stage 5.2 GHz driver amplifier. A standard Class AB driver amplifier without using FP technology was also implemented for comparison under the identical power consumption. The circuit with an FP device biased at VFP= -4 V in the output stage demonstrated at least 2 dB improvement on the third-order intercept point at input (IIP3) performance over the standard one within the useful power range in two tone measurement.
Keywords :
high electron mobility transistors; radiofrequency amplifiers; AlGaAs-InGaAs; Class AB driver amplifier; circuit linearity performance; frequency 5.2 GHz; high electron mobility transistors; pseudomorphic HEMT RF driver amplifier; second-order harmonics; third-order harmonics; tunable field-plate bias voltage technology; voltage -4 V; Driver circuits; Indium gallium arsenide; Linearity; PHEMTs; Power amplifiers; Power system harmonics; Radio frequency; Radiofrequency amplifiers; Tunable circuits and devices; Voltage;
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium, 2009. CISC 2009. Annual IEEE
Conference_Location :
Greensboro, NC
Print_ISBN :
978-1-4244-5191-3
Electronic_ISBN :
1550-8781
DOI :
10.1109/csics.2009.5315757
