Investigation and modeling of impact ionization with regard to the RF- and noise behaviour of HFET

Author

Reuter, R. ; Agethen, M. ; Auer, U. ; Van Waasen, S. ; Peters, D. ; Brockerhoff, W. ; Tegude, F.J.

Author_Institution

Duisburg Univ., Germany

Volume

3

fYear

1996

fDate

17-21 June 1996

Firstpage

1317

Abstract

A new small-signal and noise equivalent circuit for Heterostructure Field-Effect Transistors (HFET), including the influence of impact ionization and gate-leakage current on the electronic properties, is presented. The capability of the new model is demonstrated by bias-dependent investigations of the RF- and noise behaviour of InAlAs-InGaAs-InP HFET.

Keywords

S-parameters; equivalent circuits; impact ionisation; leakage currents; microwave field effect transistors; semiconductor device models; semiconductor device noise; HFET; InAlAs-InGaAs-InP; RF-behaviour; bias-dependent investigation; electronic properties; gate-leakage current; heterostructure FET; heterostructure field-effect transistors; impact ionization; modeling; noise behaviour; noise equivalent circuit; small-signal equivalent circuit; Circuit noise; Equivalent circuits; Frequency; HEMTs; Impact ionization; Indium compounds; Indium gallium arsenide; MODFETs; Microwave FETs; Noise shaping;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1996., IEEE MTT-S International

Conference_Location

San Francisco, CA, USA

ISSN

0149-645X

Print_ISBN

0-7803-3246-6

Type

conf

DOI

10.1109/MWSYM.1996.512178

Filename

512178