Title :
High Aspect Ratio CPW Fabricated Using a Micromachining Process Combining DRIE, Thermal Oxidation, Electroplating, and Planarization
Author :
Tod, Shane T. ; Huang, Xiaojun T. ; Bowers, John E. ; MacDonald, Noel C.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of California, Santa Barbara, CA, USA
Abstract :
A micromachining process has been developed to fabricate high aspect ratio CPW. The tall conductor sidewall created from the high aspect ratio process reduces the resistance per length of the transmission line which lowers the attenuation. The micromachining process combines Si DRIE, thermal oxidation, electroplating, and planarization to create tall CPW with Au conductors and SiO2 dielectrics. Transmission lines with characteristic impedances of 16-21 Omega have been fabricated on high resistivity Si. Transmission line characteristics were measured from 1-50 GHz and showed propagation loss of 1.1-1.3 dB/cm at 10 GHz.
Keywords :
coplanar transmission lines; coplanar waveguides; micromachining; CPW; Si; SiO2; characteristic impedance; coplanar waveguides; electroplating; frequency 1 GHz to 50 GHz; micromachining process; planarization; propagation loss; thermal oxidation; transmission line characteristics; Attenuation; Conductors; Coplanar waveguides; Dielectrics; Gold; Micromachining; Oxidation; Planarization; Thermal conductivity; Transmission lines;
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium, 2009. CISC 2009. Annual IEEE
Conference_Location :
Greensboro, NC
Print_ISBN :
978-1-4244-5191-3
Electronic_ISBN :
1550-8781
DOI :
10.1109/csics.2009.5315761
