On-Wafer Seamless Integration of GaN and Si (100) Electronics

Author

Chung, Jin Wook ; Lu, Bin ; Palacios, Tomás

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Massachusetts Inst. of Technol., Cambridge, MA, USA

fYear

2009

fDate

11-14 Oct. 2009

Firstpage

1

Lastpage

4

Abstract

The high thermal stability of nitride semiconductors allows for the on-wafer integration of (001)Si CMOS electronics and electronic devices based on these semiconductors. This paper describes the technology developed at MIT to seamlessly integrate GaN and Si transistors in very close proximity (<5 mum). This integration, the first of any III-V field effect transistor with (001) Si electronics, enables tremendous new possibilities to circuit and system designers. For example, we will study the use of hybrid GaN-Si circuits to improve the power distribution networks in Si microprocessors.

Keywords

III-V semiconductors; MOSFET; elemental semiconductors; gallium compounds; high electron mobility transistors; microprocessor chips; silicon; thermal stability; wide band gap semiconductors; (001)Si CMOS electronics; GaN-Si; III-V field effect transistor; MOSFET; Si; Si microprocessors; Si(100) electronics; high electron mobility transistors; hybrid GaN-Si circuits; nitride semiconductors; on-wafer seamless integration; power distribution networks; thermal stability; CMOS technology; Epitaxial growth; Frequency; Gallium arsenide; Gallium nitride; HEMTs; MODFETs; MOSFETs; Radiofrequency amplifiers; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductor Integrated Circuit Symposium, 2009. CISC 2009. Annual IEEE

Conference_Location

Greensboro, NC

ISSN

1550-8781

Print_ISBN

978-1-4244-5191-3

Electronic_ISBN

1550-8781

Type

conf

DOI

10.1109/csics.2009.5315780

Filename

5315780