A Fully Integrated, Compound Transceiver MIMIC Utilizing Six Antenna Ports for 60 GHz Wireless Applications

Author

Koch, S. ; Kallfass, I. ; Weber, R. ; Leuther, A. ; Schlechtweg, M. ; Saito, S.

Author_Institution

Sony Deutschland GmbH, Stuttgart, Germany

fYear

2009

fDate

11-14 Oct. 2009

Firstpage

1

Lastpage

4

Abstract

A fully integrated transceiver MIMIC (millimeter wave monolithic integrated circuit) with six antenna port functionality for 55 to 65 GHz wireless applications has been developed. The chip has been realized using 100 nm gatelength metamorphic InAlAs / InGaAs HEMT (high electron mobility transistor) technology on GaAs substrates together with CPW (coplanar waveguide) technology. The novel transceiver topology consists of switches, amplifiers, mixers, a voltage controlled oscillator and a frequency divider. The receiver chain shows noise figure < 2.6 dB on the low noise amplifier level and smaller than 7 dB including the antenna switching network. The medium output power amplifier delivers the saturated power level of + 14 dB m. This is the highest integration level for a 60 GHz compound semiconductor transceiver chip reported to-date.

Keywords

HEMT integrated circuits; III-V semiconductors; aluminium compounds; coplanar waveguides; field effect MIMIC; frequency dividers; gallium arsenide; indium compounds; low noise amplifiers; network topology; power amplifiers; switching networks; transceivers; voltage-controlled oscillators; CPW technology; InAlAs-InGaAs; amplifiers; antenna ports; antenna switching network; compound semiconductor transceiver chip; coplanar waveguide; frequency 55 GHz to 65 GHz; frequency divider; fully integrated compound transceiver MIMIC; gallium arsenide substrates; high electron mobility transistor; low noise amplifier level; millimeter wave monolithic integrated circuit; mixers; nanometer gatelength metamorphic HEMT; power amplifier; saturated power level; size 100 nm; switches; transceiver topology; voltage controlled oscillator; wireless applications; Coplanar waveguides; HEMTs; Integrated circuit technology; MIMICs; Millimeter wave technology; Millimeter wave transistors; Monolithic integrated circuits; Noise figure; Power amplifiers; Transceivers;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductor Integrated Circuit Symposium, 2009. CISC 2009. Annual IEEE

Conference_Location

Greensboro, NC

ISSN

1550-8781

Print_ISBN

978-1-4244-5191-3

Electronic_ISBN

1550-8781

Type

conf

DOI

10.1109/csics.2009.5315785

Filename

5315785