Title :
A Fully Integrated, Compound Transceiver MIMIC Utilizing Six Antenna Ports for 60 GHz Wireless Applications
Author :
Koch, S. ; Kallfass, I. ; Weber, R. ; Leuther, A. ; Schlechtweg, M. ; Saito, S.
Author_Institution :
Sony Deutschland GmbH, Stuttgart, Germany
Abstract :
A fully integrated transceiver MIMIC (millimeter wave monolithic integrated circuit) with six antenna port functionality for 55 to 65 GHz wireless applications has been developed. The chip has been realized using 100 nm gatelength metamorphic InAlAs / InGaAs HEMT (high electron mobility transistor) technology on GaAs substrates together with CPW (coplanar waveguide) technology. The novel transceiver topology consists of switches, amplifiers, mixers, a voltage controlled oscillator and a frequency divider. The receiver chain shows noise figure < 2.6 dB on the low noise amplifier level and smaller than 7 dB including the antenna switching network. The medium output power amplifier delivers the saturated power level of + 14 dB m. This is the highest integration level for a 60 GHz compound semiconductor transceiver chip reported to-date.
Keywords :
HEMT integrated circuits; III-V semiconductors; aluminium compounds; coplanar waveguides; field effect MIMIC; frequency dividers; gallium arsenide; indium compounds; low noise amplifiers; network topology; power amplifiers; switching networks; transceivers; voltage-controlled oscillators; CPW technology; InAlAs-InGaAs; amplifiers; antenna ports; antenna switching network; compound semiconductor transceiver chip; coplanar waveguide; frequency 55 GHz to 65 GHz; frequency divider; fully integrated compound transceiver MIMIC; gallium arsenide substrates; high electron mobility transistor; low noise amplifier level; millimeter wave monolithic integrated circuit; mixers; nanometer gatelength metamorphic HEMT; power amplifier; saturated power level; size 100 nm; switches; transceiver topology; voltage controlled oscillator; wireless applications; Coplanar waveguides; HEMTs; Integrated circuit technology; MIMICs; Millimeter wave technology; Millimeter wave transistors; Monolithic integrated circuits; Noise figure; Power amplifiers; Transceivers;
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium, 2009. CISC 2009. Annual IEEE
Conference_Location :
Greensboro, NC
Print_ISBN :
978-1-4244-5191-3
Electronic_ISBN :
1550-8781
DOI :
10.1109/csics.2009.5315785
