Title :
A 12-Gb/s, Direct QPSK Modulation SiGe BiCMOS Transceiver for Last Mile Links in the 70-80 GHz Band
Author :
Sarkas, I. ; Nicolson, S.T. ; Tomkins, A. ; Laskin, E. ; Chevalier, P. ; Sautreuil, B. ; Voinigescu, S.P.
Author_Institution :
Edward S. Rogers Sr. Dept. of ECE, Univ. of Toronto, Toronto, ON, Canada
Abstract :
This paper describes a novel single-chip W-band wireless transceiver utilizing a direct mm-wave QPSK modulator. The transceiver was fabricated in a 130 nm SiGe BiCMOS technology and can operate at data rates in excess of 10 Gb/s. The Zero-IF receiver peak gain is 50 dB, the noise figure is 7 dB while the 3-dB IF bandwidth extends over 6 GHz. The differential transmitter achieves a maximum output power of +9 dBm, while the transceiver occupies 1.9 mm times 1.1 mm. The total power consumption, including the 4 times 20 Gb/s PRBS generator, is 1.2 W from 1.5, 2.5 and 3.3 V power supplies.
Keywords :
CMOS integrated circuits; quadrature phase shift keying; transceivers; BiCMOS transceiver; IF bandwidth; W-band wireless transceiver; Zero-IF receiver; differential transmitter; direct QPSK modulation; direct mm-wave QPSK modulator; frequency 70 GHz to 80 GHz; gain 50 dB; noise figure 7 dB; power 1.2 W; quadrature phase shift keying; size 130 nm; voltage 1.5 V; voltage 2.5 V; voltage 3.3 V; Bandwidth; BiCMOS integrated circuits; Gain; Germanium silicon alloys; Noise figure; Power generation; Quadrature phase shift keying; Silicon germanium; Transceivers; Transmitters;
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium, 2009. CISC 2009. Annual IEEE
Conference_Location :
Greensboro, NC
Print_ISBN :
978-1-4244-5191-3
Electronic_ISBN :
1550-8781
DOI :
10.1109/csics.2009.5315791