DocumentCode
2271043
Title
Low-frequency dispersion and its influence on the intermodulation performance of AlGaAs/GaAs HBTs
Author
Lu, K. ; McIntosh, P.M. ; Snowden, C.M. ; Pollard, R.D.
Author_Institution
Dept. of Electron. & Electr. Eng., Leeds Univ., UK
Volume
3
fYear
1996
fDate
17-21 June 1996
Firstpage
1373
Abstract
The relationship between low-frequency dispersion and the intermodulation performance of AlGaAs/GaAs HBTs has been demonstrated for the first time. The theoretical analysis and experimental results indicate that IM/sub 3/ will depend strongly on the frequency spacing (/spl Delta/f=f/sub 2/-f/sub 1/) in the two-tone measurement.
Keywords
III-V semiconductors; aluminium compounds; equivalent circuits; gallium arsenide; heterojunction bipolar transistors; intermodulation; semiconductor device models; AlGaAs-GaAs; HBTs; IM/sub 3/; frequency spacing; intermodulation performance; low-frequency dispersion; two-tone measurement; Circuit simulation; Equivalent circuits; Frequency; Gallium arsenide; Heterojunction bipolar transistors; Microwave Theory and Techniques Society; Monitoring; Temperature; Time measurement; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1996., IEEE MTT-S International
Conference_Location
San Francisco, CA, USA
ISSN
0149-645X
Print_ISBN
0-7803-3246-6
Type
conf
DOI
10.1109/MWSYM.1996.512191
Filename
512191
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