DocumentCode :
2271049
Title :
The Evolution and Importance of Composition in RF Compound Semiconductors
Author :
Barratt, C.A.
Author_Institution :
RFMD, Greensboro, NC, USA
fYear :
2009
fDate :
11-14 Oct. 2009
Firstpage :
1
Lastpage :
3
Abstract :
This paper was focused on the evolution and importance of RF compound semiconductor devices. RF compound semiconductors began as a set of niche diode technologies where the performance commanded sale prices that offset the costly fabrication. Developments including SEMI standard wafers and planar processing led to a period of substantial investment and gave rise to a hype cycle that drove the industry along a silicon like model. The creative use of combinations of various compositions of III-V compounds has resulted in an extremely vibrant and mature industry. The major advantage that compound semiconductors have over competing technologies is the rich pool of available alloys that can produce ever more useful device performance. Pursuit of this avenue has in many ways, compensated for the lack of a true MOSFET analog.
Keywords :
III-V semiconductors; MOSFET; microwave devices; semiconductor diodes; III-V compounds; MOSFET analog; RF compound semiconductor devices; SEMI standard wafers; diode technology; planar processing; silicon like model; Fabrication; III-V semiconductor materials; Investments; Marketing and sales; Radio frequency; Semiconductor device modeling; Semiconductor devices; Semiconductor diodes; Silicon; Standards development;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium, 2009. CISC 2009. Annual IEEE
Conference_Location :
Greensboro, NC
ISSN :
1550-8781
Print_ISBN :
978-1-4244-5191-3
Electronic_ISBN :
1550-8781
Type :
conf
DOI :
10.1109/csics.2009.5315803
Filename :
5315803
Link To Document :
بازگشت