Title :
Highly efficient SHG in all-epitaxial quasi-phase-matched GaAs
Author :
Vodopyanov, K.L. ; Skauli, T. ; Pinguet, T.J. ; Schober, A. ; Levi, O. ; Eyres, L.A. ; Fejer, M.M. ; Harris, J.S. ; Gerard, B. ; Becouarn, L. ; Lailier, E.
Author_Institution :
Edward L. Ginzton Lab., Stanford Univ., CA, USA
Abstract :
Summary form only given. Our results suggest that all-epitaxially grown orientation-patterned GaAs crystals have excellent properties for bulk nonlinear optical applications in the mid-IR including SHG, difference frequency generation (DFG) and optical parametric oscillators (OPO).
Keywords :
III-V semiconductors; gallium arsenide; optical harmonic generation; optical materials; optical parametric oscillators; optical phase matching; GaAs; all-epitaxially grown orientation-patterned GaAs crystals; bulk nonlinear optical applications; difference frequency generation; mid-IR; optical SHG; optical parametric oscillators; Crystals; Gallium arsenide; Laser excitation; Laser tuning; Molecular beam epitaxial growth; Nonlinear optics; Optical device fabrication; Optical harmonic generation; Optical materials; Optical pumping;
Conference_Titel :
Lasers and Electro-Optics, 2002. CLEO '02. Technical Digest. Summaries of Papers Presented at the
Conference_Location :
Long Beach, CA, USA
Print_ISBN :
1-55752-706-7
DOI :
10.1109/CLEO.2002.1034150
