Title :
GaN Technology for RF Electronics - Development Status in Europe
Author :
Blanck, H. ; Splettstößer, J. ; Floriot, D.
Author_Institution :
United Monolithic Semicond. GmbH, Ulm, Germany
Abstract :
GaN technology has gained a lot of attention in Europe over the last few years for various domains including RF electronics. This paper will try to summarize the current status achieved and illustrate it with a few representative examples. Due to the importance of the subject this paper will focus solely on the RF electronics related topics, which should be of major interest in the frame of this conference. Aspects covering material, devices up to circuits and module integration will be addressed.
Keywords :
III-V semiconductors; gallium compounds; microwave devices; radiocommunication; semiconductor technology; wide band gap semiconductors; GaN; RF electronics; module integration; Consumer electronics; Europe; Food technology; Gallium arsenide; Gallium nitride; HEMTs; III-V semiconductor materials; Radio frequency; Space technology; Thermal management;
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium, 2009. CISC 2009. Annual IEEE
Conference_Location :
Greensboro, NC
Print_ISBN :
978-1-4244-5191-3
Electronic_ISBN :
1550-8781
DOI :
10.1109/csics.2009.5315810