Novel first-order quasi-phase matched semiconductor waveguide crystal for frequency conversion

Author

Rafailov, E.U. ; Loza-Alvarez, R. ; Artigas, David ; Brown, C. Titus ; Sibbett, W. ; De La Rue, Richard M.

Author_Institution

Sch. of Phys. & Astron., Univ. of St. Andrews, UK

fYear

2002

fDate

24-24 May 2002

Firstpage

419

Abstract

Summary from only given. We report here a first-order quasi-phase matched semiconductor device based on a novel methodology that involves a periodically-switched-nonlinearity (PSN). Our first-order QPM devices utilise a periodically-switched-nonlinearity in a novel design of GaAs/AlGaAs structure, which is based on a re-growth procedure. Our calculations show that SHG conversion efficiencies from such devices at wavelengths beyond 4 /spl mu/m.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; optical harmonic generation; optical materials; optical phase matching; optical waveguides; GaAs-AlGaAs; GaAs/AlGaAs structure; SHG conversion efficiencies; first-order QPM devices; first-order quasi-phase matched semiconductor waveguide crystal; optical frequency conversion; periodically-switched-nonlinearity; re-growth procedure; Crystals; Frequency conversion; Gallium arsenide; Optical harmonic generation; Optical pumping; Optical refraction; Optical variables control; Optical waveguides; Semiconductor waveguides; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2002. CLEO '02. Technical Digest. Summaries of Papers Presented at the

Conference_Location

Long Beach, CA, USA

Print_ISBN

1-55752-706-7

Type

conf

DOI

10.1109/CLEO.2002.1034151

Filename

1034151