DocumentCode :
2271119
Title :
Behavioral modeling of narrowband microwave power amplifiers with applications in simulating spectral regrowth
Author :
Leke, A. ; Kenney, J.S.
Author_Institution :
Inf. Syst. Lab., Stanford Univ., CA, USA
Volume :
3
fYear :
1996
fDate :
17-21 June 1996
Firstpage :
1385
Abstract :
A new behavioral model for narrowband microwave power amplifiers is proposed. Analytic expressions for the gain compression (AM-AM) and amplitude dependent phase distortion (AM-PM) of a nonlinear amplifier are derived from a third-order Volterra series model. The cases of a single-tone and of a two-tone signal are explored. We show that the gain compression characteristics of nonlinear amplifiers depend on the amplitude modulation characteristics of the signal. Furthermore, we show that the time-averaged phase deviation is independent of the modulation envelope. This justifies the new model proposed for obtaining the envelope transfer characteristics by applying the Bessel-Fourier technique only to the AM-AM characteristic. This model is verified by comparing spectral regrowth simulations of digitally-modulated signals to those measured in a 1.9 GHz GaAs FET power amplifier.
Keywords :
Bessel functions; III-V semiconductors; Volterra series; amplitude modulation; circuit analysis computing; gallium arsenide; microwave power amplifiers; 1.9 GHz; Bessel-Fourier technique; GaAs; amplitude dependent phase distortion; amplitude modulation characteristics; behavioral modeling; digitally-modulated signals; envelope transfer characteristics; gain compression; modulation envelope; narrowband microwave power amplifiers; nonlinear amplifier; single-tone signal; spectral regrowth; third-order Volterra series model; time-averaged phase deviation; two-tone signal; Circuit simulation; Computational modeling; Microwave amplifiers; Narrowband; Nonlinear distortion; Phase distortion; Power amplifiers; Power measurement; Power system modeling; Predictive models;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest, 1996., IEEE MTT-S International
Conference_Location :
San Francisco, CA, USA
ISSN :
0149-645X
Print_ISBN :
0-7803-3246-6
Type :
conf
DOI :
10.1109/MWSYM.1996.512194
Filename :
512194
Link To Document :
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