Title : 
Behavioral modeling of narrowband microwave power amplifiers with applications in simulating spectral regrowth
         
        
            Author : 
Leke, A. ; Kenney, J.S.
         
        
            Author_Institution : 
Inf. Syst. Lab., Stanford Univ., CA, USA
         
        
        
        
        
        
            Abstract : 
A new behavioral model for narrowband microwave power amplifiers is proposed. Analytic expressions for the gain compression (AM-AM) and amplitude dependent phase distortion (AM-PM) of a nonlinear amplifier are derived from a third-order Volterra series model. The cases of a single-tone and of a two-tone signal are explored. We show that the gain compression characteristics of nonlinear amplifiers depend on the amplitude modulation characteristics of the signal. Furthermore, we show that the time-averaged phase deviation is independent of the modulation envelope. This justifies the new model proposed for obtaining the envelope transfer characteristics by applying the Bessel-Fourier technique only to the AM-AM characteristic. This model is verified by comparing spectral regrowth simulations of digitally-modulated signals to those measured in a 1.9 GHz GaAs FET power amplifier.
         
        
            Keywords : 
Bessel functions; III-V semiconductors; Volterra series; amplitude modulation; circuit analysis computing; gallium arsenide; microwave power amplifiers; 1.9 GHz; Bessel-Fourier technique; GaAs; amplitude dependent phase distortion; amplitude modulation characteristics; behavioral modeling; digitally-modulated signals; envelope transfer characteristics; gain compression; modulation envelope; narrowband microwave power amplifiers; nonlinear amplifier; single-tone signal; spectral regrowth; third-order Volterra series model; time-averaged phase deviation; two-tone signal; Circuit simulation; Computational modeling; Microwave amplifiers; Narrowband; Nonlinear distortion; Phase distortion; Power amplifiers; Power measurement; Power system modeling; Predictive models;
         
        
        
        
            Conference_Titel : 
Microwave Symposium Digest, 1996., IEEE MTT-S International
         
        
            Conference_Location : 
San Francisco, CA, USA
         
        
        
            Print_ISBN : 
0-7803-3246-6
         
        
        
            DOI : 
10.1109/MWSYM.1996.512194