DocumentCode
2271493
Title
A balanced distributed preamplifier using MMIC GaAs MESFET technology
Author
Nguyen, T.L. ; Freundorfer, A.P.
Author_Institution
Dept. of Electr. & Comput. Eng., Queen´s Univ., Kingston, Ont., Canada
Volume
3
fYear
1996
fDate
17-21 June 1996
Firstpage
1449
Abstract
A MMIC balanced preamplifier was fabricated using a 0.8 /spl mu/m gate length process. A 45 dB/spl Omega/ transimpedance gain, a 6 GHz bandwidth, a 10 pA//spl radic/(Hz) input noise and a 12 dB CMRR were measured.
Keywords
III-V semiconductors; MESFET integrated circuits; MMIC amplifiers; distributed amplifiers; field effect MMIC; gallium arsenide; optical receivers; preamplifiers; wideband amplifiers; 0.8 micron; 6 GHz; GaAs; GaAs MESFET technology; MMIC balanced preamplifier; distributed preamplifier; optical receiver application; Bandwidth; Filters; Frequency; Gain measurement; Gallium arsenide; MESFETs; MMICs; Photodiodes; Preamplifiers; Tuning;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1996., IEEE MTT-S International
Conference_Location
San Francisco, CA, USA
ISSN
0149-645X
Print_ISBN
0-7803-3246-6
Type
conf
DOI
10.1109/MWSYM.1996.512209
Filename
512209
Link To Document