Title :
Long-wavelength InP-based vertical-cavity surface-emitting lasers
Author :
Ortsiefer, M. ; Amann, M.-C.
Author_Institution :
Walter Schottky Inst., Garching, Germany
Abstract :
Summary form only given. The otherwise mature InP-technology used for edge-emitters is to a large extent inconsistent with the demands required for VCSELs which is mainly due to the lack of InP-based Bragg reflectors with sufficient thermal and optical properties. our recently reported monolithic and InP-based buried tunnel junction (BTJ) structure promises for the first time to fulfill the required system performances. The BTJ-concept outperforms any of the previous concepts for 1.55 /spl mu/m VCSELs.
Keywords :
III-V semiconductors; indium compounds; infrared sources; integrated optoelectronics; laser transitions; optical transmitters; surface emitting lasers; tunnelling; 1.55 /spl mu/m VCSELs; 1.55 micron; BTJ-concept; InP; InP-based Bragg reflectors; InP-based buried tunnel junction structure; InP-technology; VCSELs; device structure; edge-emitters; monolithic structure; optical properties; thermal properties; Dielectrics; Mirrors; Optical fiber communication; Optical surface waves; Reflectivity; Surface emitting lasers; Temperature dependence; Thermal conductivity; Vertical cavity surface emitting lasers; Voltage;
Conference_Titel :
Lasers and Electro-Optics, 2002. CLEO '02. Technical Digest. Summaries of Papers Presented at the
Conference_Location :
Long Beach, CA, USA
Print_ISBN :
1-55752-706-7
DOI :
10.1109/CLEO.2002.1034171
